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This diploma thesis deals with the preparation of epitaxially grown metastable paramagnetic Fe films alloyed by Ni on Cu/Si(100) substrates at RT. Molecular beam epitaxy of Cu(100) buffer layer was performed on H-Si(100) native SiO2 free samples treated by etching in HF or thermal treatment. The epitaxially grown Cu layers with thickness ranging from 50 up to 130 nm serves as suitable substrate for the deposition of 44-ML-thick paramagnetic Fe78Ni22. The film growth was taking place in CO atmosphere and as well as Ni it led to paramagnetic film stabilization. The structural and magnetic ion-beam-induced transformation of desired Fe-Ni structure was performed and propeties of irradiated films were characterized afterwards by MOKE. Then some specific patterns on Si(100) by e-beam litography were fabricated and they served as suitable matrix for Cu(100) buffer layer and paramagnetic Fe. Prepared Si(100), globally and locally deposited metal films were examined by LEED, XPS, AFM, AES, SEM a STM. The recorded results showed the possibility of paramagnetic films preparation on H-Si(100) where it was possible to make ferromagnetic patterns on paramagnetic background by irradiation of specific ion dose. |
