Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates
| Autor: | Minani, Evariste |
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| Jazyk: | angličtina |
| Rok vydání: | 2002 |
| Předmět: | |
| Druh dokumentu: | Master's Thesis |
| Popis: | Includes bibliography. Hydrogenated amorphous silicon (a-Si:H) is an important thin film semiconductor with a wide variety of applications in microelectronics and optoelectronics. However, it is metastable and photodegrades after a moderate light illumination (Staebler-Wronski effect). The most stable material has been suggested to be at the edge of crystallinity with microcrystalline inclusions. Using a combination of positron annihilation and X-ray diffraction techniques, the microstructure of hydrogenated amorphous silicon grown by hot wire chemical vapour deposition on glass substrates at different substrate temperatures ranging between 300°C and 500 °C is examined. In previous studies the crystallisation was accompanied by a relaxation of defect structure with an increase in free volume at positron annihilation site. In this work, both techniques show a relaxation of the network with increasing growth temperature, leading to a higher degree of ordering, shorter bond lengths, and a reduction in the average size of defects in the material. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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