Polarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on silicon

Autor: Zandbergen, Sander R., Gibson, Ricky, Amirsolaimani, Babak, Mehravar, Soroush, Keiffer, Patrick, Azarm, Ali, Kieu, Khanh
Jazyk: angličtina
Rok vydání: 2017
Druh dokumentu: Článek
ISSN: 2159-3930
DOI: 10.1364/OME.7.002102
Popis: We report a novel, polarization dependent, femtosecond laser- induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 mu m, and circular polarization causes the nanostructures to flatten out or form loops of material, to diameters of approximately 195 nm. During excitation, it is also observed that the generated second and third harmonic signals from the substrate and surface nanostructures increase with exposure time. (C) 2017 Optical Society of America
Databáze: Networked Digital Library of Theses & Dissertations