Characterizing optical and electrical properties of monolayer MoS2 by backside absorbing layer microscopy
| Autor: | Ullberg, Nathan |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
backside absorbing layer microscopy
BALM monolayer MoS2 TMD TMDC 2D materials nanomaterials nanotechnology refractive index extinction coefficient absorption coefficient field-effect transistor FET semiconductors optoelectronics optics raw image processing chemical vapor deposition CVD in situ characterization Nano Technology Nanoteknik Condensed Matter Physics Den kondenserade materiens fysik |
| Druh dokumentu: | Text |
| Popis: | Nanomaterials are playing an increasing role in novel technologies, and it is important to develop optical methods to characterize them in situ. To that end, backside absorbing layer microscopy (BALM) has emerged as a powerful tool, being capable to resolve sub-nanometer height profiles, with video-rate acquisition speeds and a suitable geometry to couple live experiments. In the internship, several techniques involving BALM were developed, and applied to study optical and electrical properties of the transition metal dichalcogenide (TMD) monolayer MoS2, a type of 2-dimensional (2D) crystalline semiconductor. A simulations toolkit was created in MATLAB to model BALM, a workflow to reliably extract linear intensities from the CMOS detector was realized, and 2D MoS2 was synthesized by chemical vapor deposition followed by transfer to appropriate substrates. BALM data of the 2D MoS2 was acquired and combined with simulations, giving a preliminary result for its complex refractive index at 5 optical wavelengths. In addition, the first steps towards coupling BALM with a gate biased 2D MoS2 field-effect transistor were explored. To complement BALM measurements, the grown samples were also characterized by conventional optical microscopy, scanning electron microscopy, atomic force microscopy, photoluminescence spectroscopy, and Raman spectroscopy. This work provides new additions to an existing platform of BALM techniques, enabling novel BALM experiments with nanomaterial systems. In particular, it introduces a new alternative for local extraction of optical parameters and for probing of electrical charging effects, both of which are vital in the research and development of nano-optoelectronics. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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