| Popis: |
The purpose of this project was to design and manufacture a Low-Noise Amplifier (LNA) working at a 5 GHz frequency band, by using High Electron Mobility Transistor (HEMT) from Avago Technologies. To improve our design, it was necessary to build a two-stage amplifier; one stage to work in minimum noise sensitivity, and another stage to get the maximum gain achievable by the transistor. This thesis work was carried out as a part of the UAV (Unmanned Aerial Vehicle) system project developed by a research group at the Radio communication and Microwave Electronics department, UMH.The project was designed and simulated using Agilent ADS (Advanced Design System) software. |
