Investigation of P-type Tin-Oxide Thin Film Transistor Integrated with Ferroelectric Hafnium Zirconium Oxide Memory
| Autor: | LI, TSUNG-MING, 李宗明 |
|---|---|
| Rok vydání: | 2019 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 In this study, we study the memory of hafnium-zirconium oxide (HfZrO) capacitors connected in series with P-type tin oxide thin films. First, we discuss ferroelectric capacitors of HfZrO with different thicknesses and different capacitance areas, and we know that in relatively thick HfZrO and the smaller capacitance area of the HfZrO capacitor have a smaller leakage tendency than the thinner HfZrO capacitor. Next, the ferroelectric characteristics and the PUND measurement for polarization current extraction, the relatively thicker HfZrO capacitor is superior to the thinner HfZrO capacitor. From the different thickness of the HfZrO, the endurance test is known, the hafnium zirconium-capacitor with different thicknesses is at the appropriate voltage and its memory window can be maintained up to 2.3 × 107 times. From the transfer characteristics of the P-type tin oxide thin film transistor (ID-VG) in this study, the On/Off current ratio is 3 orders of magnitude, and after integrated with the 10 nm HfZrO capacitor, after we found that the thicker HfZrO capacitor and smaller HfZrO capacitor area integrated with P-type tin oxide thin film transistor had a better memory window by capacitance matching, also the ID-VG curve form a clockwise direction, this shows the device had the ferroelectric property. Threshold voltage shift due to the series resistance cause the device need more bias voltage to open and close the device, this is why the ID-VG curve shows the different from the normal P-type tin oxide thin film transistor ID-VG curve. Under a large capacitance area due to the strong gate control capability, the shutdown current(Ioff) is also reduced. In the integration of the transfer characteristics of the P-type tin oxide thin film transistor (ID-VG), the On/Off current ratio is 4 orders of magnitude. By the result of the memory window of the ferroelectric tin oxide film transistor shows that the thicker HfZrO capacitor and the smaller capacitor area can effectively suppress more leakage current, also in this conditions its memory window size is 6.0 volts. In the data storage capacity test, the thicker HfZrO capacitor is integrated into the P-type tin oxide thin film transistor. After 300 seconds, the On/Off current ratio is 2 orders of magnitude decay to 0.5 orders of magnitude. This research result will help the future P-type thin film transistor on the memory of ferroelectric tin oxide thin film transistor. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|