Fabrication and characterization of flexible transparent electrodes based on metal and metal oxide
| Autor: | WANG, YI-ZHEN, 王翊蓁 |
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| Rok vydání: | 2019 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 Nowadays, replacing glass substrates with plastic soft boards have become a development trend of optoelectronic products in addition to lightweight and portable. Flexible electronic products such as soft solar cells and soft OLEDs have become the focus of technological development. At present, the most commonly used transparent conductive film material is Indium tin oxide (ITO). Although it has high conductivity and high transmittance, it is a ceramic material and is easily broken after bending that the conductivity of film has reduced caused by cracks. The transparent conductive film made of sandwich structure (TCO/Metal/TCO) can not only improve its photoelectric properties but also effectively improve its bending resistance. In this study, a multilayer transparent electrode was prepared on a PET substrate by RF magnetron sputtering at a low-temperature process. The research experiment was divided into three parts. The first part was to fabricate the sandwich structure electrodes with silver film in the middle layer: ITO/AgNF/ITO (IAFI) and IZO/AgNF/IZO (ZAFZ), then analyze the thickness of each layer by Spectroscopic Ellipsometry. The second part was to discuss the effect of silver film on the photoelectric properties of ITO and IZO films, and the third part was to test the bending resistance of multilayer transparent electrodes and its stability through the bending test by self-made bending test machine. The experimental results show that the Spectroscopic Ellipsometry and film thickness fitting techniques can analysis layer by layer the thickness of each layer. As the thickness of the Ag film increases, it dominated the conductivity of the transparent electrode. When the deposit time of Ag film of the IAFI electrode was sputtered for 50 seconds, the visible light transmittance is 77.67 %, the sheet resistance is 6.15 Ω/sq, and the optimum value calculated by Haacke index is Vis = 13.03 10-3 -1. The ZAFZ electrode has a transmittance of 78.90% in the visible light range and a sheet resistance of 6.54 Ω/sq when the sputtering time of the Ag film was 55 seconds. The optimum value was calculated by the Haacke index: Vis = 14.41 10-3 -1. The prepared sample was reciprocated cyclically bent 1000 times by a self-made bending test machine. The resistance of the 100 nm ITO and IZO film were deteriorated due to bending, however, the resistance of IAFI and ZAFZ electrodes did not change much after bending test and maintains good electrical properties. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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