Investigation of doping effect on the physical properties of magnetoelectric GaFeO3.
| Autor: | Meng-Lin Wu, 吳孟霖 |
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| Rok vydání: | 2019 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 In this work, we have prepared two series of nanocrystalline GaFe1-xZnxO3 (x = 0, 0.01, 0.05) and Ga1-xZnxFeO3 (x = 0, 0.01, 0.02, 0.05) samples by a sol-gel method and study the effect of Zn doping on their microstructural, magnetic,dielectric and electric properties. The crystalline structure of the obtained samples was examined by X-ray diffraction (XRD). All the observed peaks of the XRD patterns of the GaFe1- xZnxO3 (x = 0, 0.01, 0.05) and Ga1-xZnxFeO3 (x = 0, 0.01, 0.02, 0.05) samples can be indexed on the basis of an orthorhombic unit cell and all samples without any secondary phase. The average grain size of the samples is about 17 nm. In addition, the dielectric properties of the samples were measured using an LCR meter. We found that the dielectric constant of GaFeO3 is increased by Zn- doping, but the dielectric loss is reduced. Moreover, the GaFeO3 sample has a leakage current behavior, which is caused by the oxygen vacancies in GaFeO3. However, the leakage current of the GaFeO3 samples can be effectively reduced by doping Zn ions. The magnetic properties of each sample were measured by a superconducting quantum interference device (SQUID). The results show that the magnetization and magnetic transition temperatures of the GaFe1-xZnxO3 (x = 0, 0.01, 0.05) samples are significantly decreased by doping with Zn. However, the magnetization and magnetic transition temperatures of the Ga1-xZnxFeO3 (x = 0, 0.01, 0.02, 0.05) samples increased significantly with increasing Zn doping concentration. Therefore, the Zn ions are doped to the Fe or Ga sites of GaFeO3 and exhibit different responses to the magnetic properties of GaFeO3 |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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