Analysis on Compound Slurry with Graphene Oxide for Chemical Mechanical Polishing of Single Crystalline Silicon Carbide Wafer
| Autor: | Yu-Jing Lin, 林妤靜 |
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| Rok vydání: | 2019 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 Single Crystalline Silicon Carbide (SiC) Wafer has high and wide voltage, high breakdown voltage, and high thermal conductivity properties in high power devices. However, it has a very high Mohs hardness 9.2 and brittle substrate, which is a time-consuming process in the traditional chemical mechanical polishing (CMP). A 30 minutes dipping test was performed on 4H-SiC with different base slurry, and 0.1 wt% GO powder add in C -face produce COOH and C-O-OH bonds, while Si-face had no obvious reaction by Raman spectroscopy. This study aims to improve the process time by Compound-Slurry Chemical Mechanical Polishing (CSCMP) add 0.1 wt% graphene oxide (GO) and Gas Liquid Assisted Chemical Mechanical Polishing (GLA-CMP). The process contains OH and COOH bonding to form a soft passivation layer on 4H-SiC wafer surface in the slurry. Four kinds of polishing processes for C-face and Si-face of SiC wafer with the same parameters. It can achieve the best material removal rate (MRR) is 1289.91 nm/ h on C-face and the best MRR is 267.72 nm/h on Si-face by the HS+GLACMP process. Comparision of CMP and CS+GLACMP, it reduces 60.6% processing time on C-face and reduce 39.5 % processing time on Si-face after single side lapping and reduce processing time. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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