Alternative Encoding: A Two-step Transition Reduction Scheme for MLC STT-RAM
| Autor: | Yueh-Ting Hou, 侯岳廷 |
|---|---|
| Rok vydání: | 2019 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 In recent years, spin-transfer torque random access memory (STT-RAM) has been considered as a potential candidate to replace SRAM in cache design. Compared with SRAM, STT-RAM has advantages of high data density, nearly zero leakage power, and non-volatility. In order to further increase data density, multi-level-cell (MLC) STT-RAM has been proposed. However, write disturbance of MLC STT-RAM incurs the two-step transition (TT) problem. The TT problem is resulted from its hard domain and soft domain cannot be flipped to the opposite magnetization direction at the same time. Therefore, the soft domain has to be flipped twice to flip to the opposite magnetization direction of the hard domain. The TT problem will hurt the lifetime of MLC STT-RAM due to the redundant flips on soft domains. In order to mitigate the TT problem of MLC STT-RAM, we propose an alternative encoding scheme (AES) to reduce the occurances of TTs. AES utilizes the encoding method to eliminate most TTs and takes a balance distribution of unavoidable TTs among cells to improve the lifetime of MLC STT-RAM. The experiment results showed that the proposed scheme achieved a great lifetime improvement than conventional MLC STT-RAM scheme and the related work. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|