Study on Electrical Conduction Properties of Electrodeposited Cu2O Epitaxial Films and Devices
| Autor: | Ya-Chu Hsu, 許雅筑 |
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| Rok vydání: | 2018 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 In this study, Cu2O epitaxial films were electrodeposited in a sulfate solution onto polycrystalline silver substrates. Electron backscatter diffraction was used to characterize the orientation of the epilayer. I-V curves were measured to explore the anisotropy of the electrical resistivity of Cu2O. In addition, an effort of finding proper electrode with Ohmic contact characteristics with ZnO were carried out. Finally, Cu2O/ZnO diodes deposited on the Ag substrate by electrodeposition were fabricated to study its I-V characteristics. Results showed that Cu2O exhibits anisotropy of electrical resistivity. For the measurements along the, and direction, it shows that "ρ" _"211" >"ρ" _"110" >"ρ" _"100". In addition, the contact resistance of Ag and {hkl}Cu2O also exhibits anisotropy as "R" _"100" ^"IF" >"R" _"110" ^"IF" >"R" _"211" ^"IF". The Mott-schottky measurement confirmed that the electrodeposited Cu2O is p-type with a carrier concentration in a range of 1015~1017 cm-3, which decreases with increasing the layer thickness. The film sputter-deposited from a LaB6 target using Ar as a working gas is La2O3. The La2O3 film forms an Ohmic contact with ZnO having a low contact resistivity as compared to the Ti/ZnO one. Accordingly, a ZnO/Cu2O diode was fabricated by electrodeposition using La2O3 and Ag as electrodes, respectively. The diode showed the p-n characteristic, but it can’t turn on with white light. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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