MOCVD INTERFACIAL MISFIT GROWTH TECHNIQUE AND QUALITY IMPROVEMENT OF INGASB EPILAYER FOR CMOS APPLICATIONS
| Autor: | PHAN, HONG DO, 藩紅都 |
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| Rok vydání: | 2019 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 While the scaling-down issue of Si complementary metal oxide semiconductor (CMOS) devices has reached a critical point, the growth of III-V compound semiconductors, especially InxGa1-xSb materials, on GaAs or Si substrates has been considered as the next generation of CMOS devices based on its excellent properties such as high carrier mobilities, low effective mass, controllable band gap. The majority issues of this dissertation focused on the high-quality growth of the InxGa1-xSb epitaxial layer on GaAs substrates under the interfacial misfit dislocation (IMF) growth mode by metalorganic chemical vapor deposition (MOCVD) method. The effect of ex-situ rapid thermal annealing (RTA) process on the crystal quality of the InGaSb epilayers was investigated at various heating temperatures (TA). We showed that the InGaSb epilayer quality was significantly improved at a TA of around 550 oC, attributed to the annihilation of the threading dislocations and the improvement of the uniformity of 90 o IMF array under a suitable temperature of 550 oC during RTA process. With the aim to integrate InGaSb epilayer on Si substrate through low-/high-temperature (LT/HT)-GaAs buffer layer technique, the study had also preliminary demonstrated optimized growth condition of the LT-GaAs buffer layer on exactly zero offcut Si substrate, which is the important issue to obtain a high-quality HT-GaAs epilayer with anti-phase domain boundary free. The results provide important information for future MOCVD growth technique and single channel InGaSb-based CMOS device applications. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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