Simulation Study of Intrinsic Parameter Fluctuations under Process Variations in Si Gate-All-Around Nanowire MOSFETs
| Autor: | Lin, Sheng-Kai, 林聖凱 |
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| Rok vydání: | 2018 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 As transistors continuing shrink to nanoscale dimensions, Gate-All-Around (GAA) nanowire (NW) FETs are considered to be excellent candidates for future CMOS design. However, the problem of random process variability arises and become more serious along with semiconductor fabrication at nanoscale regime. These non-ideal effects will affect device performance and further limit circuit design windows. In this thesis, with the help of 3-D technology-aided design (TCAD), we successfully investigated three common random variability sources (i.e. line edge roughness (LER), metal grain granularity (MGG) and random dopant fluctuation (RDF)) in inversion mode (IM), junctionless (JL) and dopingless (DL) NWFETs. Especially for LER in IM NWFET, a detailed study for different structure parameters (radius R, gate length Lg and cross-section shape) of NWs and different LER parameters (root-mean-square amplitude Δ, correlation length Λ, and cross-correlation coefficient ρ) are discussed. Moreover, an estimation model for LER induced threshold voltage Vt variation have been modified and verified to the simulation result. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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