The Association between the Electrical Performances and the Designs of the FinFET Devices Correlated with Processes and Sizes, and Wide-Band Radio-Frequency Amplifiers
| Autor: | Rui-Sheng Chen, 陳瑞昇 |
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| Rok vydání: | 2019 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 107 Three-dimensional FinFET transistors have been used for deep sub-micron integrated circuit manufacture. In this paper, they are fabricated by over-exposure and over-etching technique to achieve shorter channel length. Many devices with as high as 9:1 aspect ratio of fin-height to fin-width different scales are measured and analyzed. The characteristic curves with widths of channel fins less than 0.12 microns are found to possess parameters like unreasonable higher kn and , which can be used to determine Early Voltage (VA). Therefore, only P-FinFET transistors with 0.12 micron channel fin widths are fitted by using the modified conventional formula, and the various determined kn values corresponding to different channel lengths are compared and verified to be approachable. Moreover, radio-frequency integrated circuit component, Power Amplifier (PA), is proposed using TSMC 0.18 micron process through Agilent Design System (ADS). The central frequency is set to be 5.0、6.0 GHz and the band range is expected to be wide enough. Inductances and capacitances are varied to search for the optimized frequency range. The corresponding applicable ranges are collected in the table. Finally, the noise figures of the PA circuit are also inspected and found to low enough such that an alternative function for suppressing the noise on amplifier is noticed in the near future. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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