A Study on the ZnO-based Homojunction and ZnO/GaN Heterojunction Diodes with p-type Ag-ZnO Cosputtered film
| Autor: | Fang-Cheng Liu, 劉芳成 |
|---|---|
| Rok vydání: | 2018 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 106 In study,Ag dope ZnO films were prepared by RF magnetron co-sputtering system by p-type film, the heat treatment undoped ZnO film is activated, Changing the intermediate activation layer, adding barrier layer AlN-ZnO film double hetero-junction, improving the electronic hole limitation ability of the film, and adding aluminum nitride boundary layer to increase the ability of electronic limitation, so that the benefit of luminescence will be changed, is hall measurement of electrical properties and photoluminescence spectra to understand film stacking characteristics, the electrical characteristics can be found that the Ag dopede ZnO has a p-type conductive pattern. the double hetero-junction and the undoped ZnO film in the intermediate layer film show n-type conductive pattern, the photoluminescence spectra show that middle layer AlN-ZnO film double hetero-junction of the middle layer effectively inhibits the oxygen vacancy in the ZnO and increases the intensity of the luminescence in the short wavelength part, and the intensity of the short wavelength luminescence is obviously enhanced by the addition of the aluminum nitride layer.This study is made p-ZnO/n-ZnO、p-ZnO/DH/n-ZnO and p-ZnO/AlN/DH/n-ZnO homo- junction diode in sapphire substrate, In current-voltage characteristics, in middle layer AlN-ZnO film double hetero-junction, when the voltage is positive or negative 0.68V, the current ratio is about 2.21, or confined aluminum nitride layer, when the voltage is positive or negative 1.15V, the current ratio is about 5.59, Both have rectifying characteristics. Further study is made on the different bottom film n-GaN and p-GaN thin films as heterostructures, the n-GaN film is made for the structure bottom p-ZnO/n -GaN、p-ZnO/DH/ n-GaN and p-ZnO/AlN/DH/ n-GaN hetero-junction diode, it n-Gan crystal structure and electrical characteristics better than those of n-ZnO, In current-voltage characteristics, Both have very rectifying characteristics, study the p-Gan film is made for the structure bottom p-ZnO/p -GaN、p-ZnO/DH/ p-GaN and p-ZnO/AlN/DH/ p-GaN hetero-junction diode, from the electrical excitation spectrum and the band diagram, under voltage, the p-GaN film can provide a few holes to increase the electron hole recombination chance to produce luminescence, the addition of aluminum nitride confining layer prevents electrons from being confined to the activation layer of the intermediate layer, which enhances the single photoluminescence. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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