Autor:	Che-Yu Chang, 張哲毓
Rok vydání:	2018
Druh dokumentu:	學位論文 ; thesis
Popis:	106 The purpose of this study is to examine the energy released due to excitation and recombination of single-layered and multi-layered InAs/GaAs quantum dots samples at different conditions. The temperature-dependence and power-dependence photoluminescence and time-resolved photoluminescence for the lifetime of the carriers were measured. In addition, the difference between InAs/GaAs single-layer and multi-layer quantum dots were discussed. At 14K, the peak energy was found to be 1.236eV and the highest lifetime was 2.36ns for InAs/GaAs single-layer ground state, 1.234eV and 1.24ns for InAs/GaAs three-layers quantum dots, and 1.278eV and 1.60ns for InAs/ GaAs eight-layers quantum dots.
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://ndltd.ncl.edu.tw/handle/fvss9a Zobrazit plný text záznamu