Design and Fabrication of Micro Pressure Sensor

Autor: Li, Chen-Lun, 李震倫
Rok vydání: 2018
Druh dokumentu: 學位論文 ; thesis
Popis: 106
The objective of this study is to have a temperature compensated nature of the pressure sensing. In this study, MEMS techniques are used to deposit a Silicon Nitride layer on the sensor substrate, Sensor front design with a pressure gauge and a thermometer of the two designs. To form the structure of the Silicon Nitride thin film membrane, a back-etching nitride mask was patterned using RIE and released in a KOH wet etchant, and platinum layer is deposited on the membrane to form piezoresistive sensing resistor and temperature sensor; gold layer is deposited as sensor contactors by Electron Beam Evaporation. Sensor is bonded with a glass substrate to prepare a vacuum chamber. The sensor is set up in the Pressurized chamber then pump the air in, finally put them into the thermostated container. When the pressure changes in the camber, a small deformation will occur, due to them relation to result in the platinum resistance change. The temperature sensor to survey resistor in different temperature simultaneously. The result enable to find pressure and temperature relation. The resistance variations signal is converted to voltage signal due to the Wheatstone bridge. Keywords: Dry Etch, Piezoresistive, Silicon Nitride, Temperature Senser, Wet Etch
Databáze: Networked Digital Library of Theses & Dissertations