Hydrothermal Growth of Zinc Oxide Single Crystal via ZnO/Muscovite Seed Layer
| Autor: | Tu, Yu-Hao, 杜雨浩 |
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| Rok vydání: | 2018 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 106 Zinc oxide is a multifunctional material for electronics, acoustics and photonics. Owing to the wide band gap (3.37eV), the large excition-binding energy (60meV), good mechanical and thermal stability. Zinc oxide has been considered to be one of the promising material for light-emitting diode. Typically, zinc oxide is grown on sapphire substrate, but its performance is not as good as bulk zinc oxide due to the defects between zinc oxide and sapphire interface. To avoid the high dislocation density which originate from the large lattice mismatch of heterostructures, people tend to use homoepitaxy to grow zinc oxide. On the other hand, the lattice constant of zinc oxide is similar to gallium nitride, the currently used material for light emitting diode. Therefore, a high quality zinc oxide single crystal substrate is needed for this kind of application. Among varies methods of growing zinc oxide single crystal, hydrothermal is the mostly used process to obtain high quality single crystal due to its low cost, large crystal size and high growth rate. In our study, we try to get high quality zinc oxide single crystal with hydrothermal process in an easier way. Hence, we use Teflon inner container to replace platinum inner container to undergoing the hydrothermal process. Besides, instead of using single crystal zinc oxide as seed, we also replace it with zinc oxide/muscovite heterostructure. Then, the quality of the as-grown crystal is confirmed with X-ray diffraction, photoluminescence and scanning electron microscopy. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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