Synthesis and Electrical Properties of InSe Device
| Autor: | Han-Ching Chang, 張翰青 |
|---|---|
| Rok vydání: | 2018 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 106 In recent years, semiconductor industry has encountered a bottleneck of microfabricated line width due to the leakage current caused by the tunneling effect, and alternatives such as the alloys (III-V), fin field-effect transistor and two-dimensional material have been discovered one after another. The appearance of graphene puts a premium on two-dimensional materials. Two-dimensional indium selenide films have attracted attention due to their high carrier mobility, but the technique of growing Two-dimensional indium selenide films haven’t mature yet, caused it’s development been limited. In this thesis, we have aimed the synthesis of large-area two-dimensional material indium selenide by chemical vapor deposition. The substrates for growing indium selenide were placed at the downstream side near indium oxide powders, where the selenium and indium oxide vapors were brought to the targeting substrates by an Ar/H2 flowing gas. We have used XPS, Raman, AFM, TEM and other equipment to analysis the composition of two-dimensional material. Simultaneously, we process the InSe electric double-layer transistors device to measure it’s electrical properties. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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