Research on the High Performance Distance and Light Detectors
| Autor: | Wen-Sheng Lin, 林文勝 |
|---|---|
| Rok vydání: | 2017 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 105 This dissertation presents the high sensitivity magnetic and optical sensors with their readout circuits, which are designed and implemented in CMOS technology. By aligning the CMOS transistor and diode structure and changing the doping concentration in implant region, the high sensitivity magnetic and light sensors can be developed. Passing through the related readout circuit, the sensitivity of the contactless sensing CMOS sensors can be improved and the electrical interface can be established for communicating with the devices. This dissertation includes three main parts: magnetic sensor, optical sensor and readout circuit. In the magnetic sensor, the designed magnetic device is used to transfer magnetic flux into electric signal. And the related readout circuit is used to filter out noise and amplify the induced voltage. The chip area of the proposed magnetic sensor is about 100 × 220 µm2, which can successfully sense the magnetic body which is away from 120 cm. In the optical sensor, the target is to reduce the dark current of the Photo Diode (PD) and to improve the optical resolution. The chip area of the proposed photo sensor is approximately 720 × 452 µm2 and the dark current is about 9.23 nA, which is valuable for business application. In view of the readout circuit, the research focuses on the small signal amplification and Delta-Sigma analog digital converter (ADC). The chip area of the proposed switched-current delta-sigma ADC (Δ-Σ ADC) is approximately 450 × 670 µm2. According to the measured results, the dynamic range and the effective number of bit (ENOB) are 64.4 dB and 10.4 bits, respectively, at the sampling frequency of 10.24 MHz, the input full scale current of 5 µA and the bandwidth of 20 KHz. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|