A Study on the Preparation of a Gas Barrier Coated on Optimization Undercut Pattern Surface
| Autor: | Hua-Wen Liu, 劉華文 |
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| Rok vydání: | 2017 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 105 This study used the standard photolithography process to achieve phoresist with undercut patterns on the polyethylene terephthalate (PET) and silicon substrates to simulate the substrates with patterned optoelectronic device and adsorbed particle. The evolutions on the step coverage of the single organosilicon (SiOxCy:H), silicon oxide(SiOx), and silicon oxynitride (SiOxNy) film as well as the resulting water vapor transmission rate (WVTR) deposited onto the patterned substrates by plasma-enhanced chemical vapor deposition (PECVD) at a low temperature using the tetramethylsilane (TMS), TMS-oxygen-(O2), and TMS-O2-ammonia (NH3) gas mixture, respectively were investigated.The resulted showed that the SiOxCy:H film using the TMS glow discharge which had a high surface mobility peformed the better uniformity and step coverage at the corner stage. In order to improve the step coverage of the organosilicon film, this research developed “rapid plasma deposition”, “Selective deposition” and used “Taguchi method” to optimize the process parameters of organosilicon. Also, changing the substrate distance to deposit organosilicon film, and using expoxy to void filling on the corner of the undercut pattern. Followed, using the same plasma processing deposit nitrogen silicon oxynitride to observe step coverage and water vapor permeability of optimization patterned photoresist surface. For the rapid plasma deposition, the sidewall coverage was found to be improved with the pressure increasing and r.f. power decreasing as a consequence of the decrease in the particles mean free path. For the Taguchi method result, the organosilicon film optimized by Taguchi method shows the better uniformity on sidewall coverage and decreases the difference of arriving angle at the corner. In addition, the SiOxNy gas barrier film consecutively deposited on the undercut pattern optimized by Taguchi method and not optimized, the water vapor permeability of optimized one has significant decrease. The optimization organosilicon cover-layer will help to modify the thickness difference of the barrier deposited between the corner stage and the surface to improve the step coverage of the film. In terms on the selective deposition process, the CF4 plasma treated on the undercut patterned PET substrate then deposited organosilicon film shows much better uniformity and sidewall coverage because of the difference of deposition rate.While the longer substrate distance, the organosilicon film shows the better sidewall coverage. Using the expoxy to void filling on the corner of the undercut pattern then deposit the gas barrier, the WVTR degradation wass significant decrease. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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