Enhanced efficiency of InGaN/GaN blue light-emitting diodes using localized surface plasmon (LSP)
| Autor: | Yu-Chieh Chen, 陳煜杰 |
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| Rok vydání: | 2017 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 105 We have investigated localized surface plasmon effect from silver (Ag) nanoparticles (NPs)/ indium tin oxide (ITO) and GaN. The Ag NPs was formed by thermal-annealing silver thin film on ITO and GaN. The experimental results indicate that the Ag NP size and period depend on the thickness of Ag thin film, annealing temperature and annealing time. Additionally, we have calculated the optimal Ag NP size and period applied to InGaN/GaN blue light-emitting diode by Rsoft. The calculated results represent that the external quantum efficiency can be enhanced by introducing the optimal Ag NP/ ITO and Ag NP/ GaN as the window layer. Under the following deposition conditions of Ag thin film of 5 nm, annealing temperature of 420℃, annealing time of 1 minutes, and nitrogen (N2) ambience, an optimal Ag NP size and period can be obtained. Finally, optimal Ag NP/ ITO and Ag NP/ GaN structures will applied to the InGaN/GaN blue light-emitting diodes to enhanced the external quantum efficiency. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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