Enhanced Device Reliability for HfZrOx-based Ferroelectric MFM Capacitor by NH3 Plasma Treatment
Autor: | Chen, Pin Hsuan, 陳品璇 |
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Rok vydání: | 2017 |
Druh dokumentu: | 學位論文 ; thesis |
Popis: | 105 |
Databáze: | Networked Digital Library of Theses & Dissertations |
Externí odkaz: |