Study on Refresh Techniques for DRAM Refresh Power Reduction
| Autor: | Po-Yuan Shen, 申博元 |
|---|---|
| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 105 DRAM circuit requires periodic refresh operations to prevent data loss. However, DRAM refresh incurs extra power consumption and degrades system performance due to delaying of memory requests service. As DRAM density increases, DRAM refresh overhead is even worsen due to the increase of refresh cycle time. Therefore, refresh overhead is a noticeable issue. In this thesis, our key observation is that refresh interval(tREFI) is specified by retention time(tRET). In fact, not all cells have same retention time and need refresh operations at same period. To address this problem, we propose a retention-aware auto-refresh (RAAR) technique by all-bank, partial-bank, and per-bank refresh mode. Most unnecessary refresh operations are reduced by RAAR according to DRAM cells’ retention time. Experimental results show that our RAAR technique not only reduce refresh power effectively, but also improve memory access performance. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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