Investigation of Normally-off p-GaN Gate HEMTs and Diodes Using Low Damage Etching Technique
| Autor: | Bo Hong Li, 李柏宏 |
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| Rok vydání: | 2017 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 105 |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
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