Study And Fabrication Of Ni-doped BiCuSeO Thermoelectric Materials
| Autor: | SHIH, JIA-YI, 史家逸 |
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| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 In this study, the thermoelectric materials of BiNiCuSeO bulk prepared by solid state reaction have been investigated, to explore in a vacuum environment for different calcination and sintering temperature with different weight percent (10,50,100wt%) of nickel doped, the physical characteristics and the thermoelectric properties of the bulk using X-ray diffraction (XRD), scanning electron microscopy (SEM) analysis of the physical characteristics of the block material and the use of homemade instruments to measure the Seebeck coefficient and analysis thermoelectric properties. According to the physical characteristics of the analysis results, the doping ratio of nickel element blocks 10% of the material no obvious crystals exhibit many holes at different sintering temperatures, grain growth is not complete, block material surface can not achieve dense flat state. With doping to increase the percentage, block material at different sintering temperatures volatilize selenium when exposed to heat, block material surface pores was no significant reduction in irregular flakes grain growth, dense bulk materials are unable to achieve flat state. When the nickel doping ratio is 50%, the sintering temperature at 780 ℃ when the grain boundary and grain growth significantly better than the bulk of other doping ratio of the sintering temperature and get the dense structure,the best ZT value is bulk of doped 10wt%,value equal 0.465. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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