The Effect of Contact-Etch-Stop-Layer and Si1-xGex Channel Mechanical Properties on Nano-Scaled Short Channel NMOSFETs with Dummy Gate Array
| Autor: | Li, Dian-Yong, 李典勇 |
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| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 The study focused on analyzing the stress distribution and performance of N-type transistors with silicon germanium channel and dummy gate arrays structure under different gate widths, numbers of dummy gate arrays, and gate pitch (Poly-to-Poly) spacings. Research found by using the strained engineering in contact etch stop layer (CESL) combined with silicon germanium channel structure can be efficiently utilized to enhance the performance of devices. In this research, we have combined the stress from silicon germanium channel lattice mismatch and contact etch stop layer, and simulated the channel stress distribution of this structure in N-type transistors via three-dimensional finite element analysis software. The intrinsic CESL stress considered in this study was tensile (3.0 GPa) (t-CESL). A 25% germanium mole fraction utilized in the Si1-xGex channel was selected to carefully analyze its impact on the Si1-xGex channel. Then we changed the number of dummy gate arrays and the Poly-to-Poly gap between dummy gates. The result shows that with a wider gate width, the carrier mobility of single gate structure is better than the plural dummy gate array, and the carrier mobility of shorter Poly-to-Poly structure is better than longer Poly-to-Poly structure. The best performance of transistors would occur in a 100 nm gate width and enhance 40% compared with the traditional transistors. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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