Light-Emitting Diodes with Graphene Film as a Transparent Conducting Electrode
| Autor: | Ma, I-Lun, 馬逸倫 |
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| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 Graphene is a two-dimensional carbon material which consists of hexagonal array of carbon atoms, and offers exceptional characteristics such as high transparency, low sheet resistance, suppleness, etc. In this study, we show that chemical vapor deposition grown graphene on copper foil and transfer it on p-GaN as light-emitting-devices transparent conducting electrode. To decrease Schottky barrier between graphene and p-GaN interface, we deposit Ni nanolayer on p-GaN substract as a buffer layer between graphene and p-GaN. After deposited 3 nm thickness nickel (Ni thin film) on p-GaN surface, followed by placing the sample in an oxygen-containing gas to 400°C thermal annealing for 3 minutes, so that the nickel layer is converted into nano nickel oxide (NiOx) dots. NiOx dots haave high transparency at blue light and UV light region. Follow the graphene transferred to do a thermal anneal make graphene with NiO / p-GaN close contact, in order to reduce the Schottky barrier between graphene and the p-GaN thus forming an ohmic contact on nickel oxide. Finally, using a circular transmission line model (CTLM) for electrical resistance measurements. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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