Analysis of silane/hydrogen discharge by computer simulation applied to intrinsic amorphous silicon thin film deposition
| Autor: | Wang, Ching Chen, 王俊荃 |
|---|---|
| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 The purpose of this study is to investigate the influence of the plasma property on the thin film property in intrinsic amorphous silicon thin film deposition processes. This study is major on simulation, also do the experiment mutual authentication. This study applies two dimensional fluid model in ESI CFD-ACE+ to simulate SiH4/H2 plasma. Though simulation, we can understand the basic qualities of plasma and the density and distribution of radicals, and analyze the variations of different powers and H2 dilution ratios in plasma. First part use two model of reaction database to simulation, the revise model is which adding some reactions of hydrogen species into the original model. The plasma properties of the revise model have lower electron density and plasma potential, whereas radicals higher than the original model. Second part is comparison plasma properties of two kind of plasma which are used to deposited amorphous silicon and microcrystalline silicon thin film. In simulation result, electron density, plasma potential, the radicals and the high-order silane species of the former are lower than the latter. This results means the environment of deposition amorphous silicon will reduce the production probability of microstructure produced by higher-order silane species. In last part simulation result, plasma potential increase as power increase, but has no correlation with the hydrogen dilution ratio. On the other hand, Si4H9/SiH3 flux ratio increase increases as power and hydrogen dilution ratio increases. Based on the above result, using lower power and hydrogen dilution ratio will decrease the damage of ion bombardment on silicon thin film and the production probability of microstructure. In experiment studies, optical emission spectroscopy was employed for analysis in PECVD plasma discharge for a-Si:H thin films. In different hydrogen dilution ratio condition, higher hydrogen dilution ratio the have higher time variant H/SiH* increase rate. In microstructure study, simulation and OES analysis result shows same trend that density of high-order silane species increase while hydrogen dilution ratio increase. The experiment result at lower hydrogen dilution ratio also shows the same trend whereas decrease at higher hydrogen dilution ratio. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|