The growth of high quality M-plane GaN on LiGaO2 substrate by Plasma-Assisted Molecular Beam Epitaxy
| Autor: | Nien-Chen Wu, 吳念臻 |
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| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 In this thesis, we studied the growth of high quality M-plane GaN thin film on LiGaO₂ (100) substrate by Plasma-Assisted Molecular Beam Epitaxy. The scanning results of atomic force microscope (AFM) showed that the surface morphology of the substrate with acid treatment by using phosphoric acid for 2 minutes were flatter than other without acid treatment. We found that it was helpful to improve the quality of M-plane GaN thin film on LGO (100) substrate by raising the growth temperature and expending the growth time. The smooth morphology of M-plane GaN thin film was observed by measurement of scanning electron microscope (SEM). The high crystal quality of M-plane GaN thin film was confirmed by X-ray diffraction (XRD). The microstructure measurement of transmission electron microscopy (TEM) obtained the low lattice mismatch in the interface between GaN and LGO. We also found that the stacking fault in GaN was attributed to unsmooth substrate surface which was hydrolyzed by steam. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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