Study of physical properties in AZO/ZnO-nanorods core-shell structures
| Autor: | Jia-Jing Zhong, 鍾佳靜 |
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| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 In this study, we use atomic layer deposition system (Atomic Layer Deposition, ALD) deposition of zinc oxide (Zinc Oxide, ZnO) thin film as seed layer, and then we growth zinc oxide (ZnO) nanorods by hydrothermal method. The precursor of hydrothermal method is prepared with zinc nitrate (Zn (NO3) 2) and hexamethylenetetramine (HMTA). We study morphology of ZnO nanorods which growth in different molar concentration and reaction times. The aspect ratio of ZnO nanorods is the best when precursor molar concentration is 0.1M, and the reaction time is 30min. And then we use ALD system cover AZO (Aluminum doped Zinc Oxide) film on ZnO nanorod. The growth temperature of AZO thin film is 280℃, and the growth cycle is 36 cycle (approximately 11.5nm). We observe ZnO nanorod and ZnO nanorod with AZO crystal orientation are (002) by XRD. There are no anaerobic defect that we observed by PL. Hall measurement shows that carrier concentration of AZO with different Aluminum percent may be reduced, and the results of field emission characteristics along with the doping percent decreased, the turn on voltage increases to drape doped aluminum ratio 1: 6 of the AZO thin film with ZnO nanorods has the best parameter, turn on voltage is 13.7 V / μm, the maximum current density is 6.53μA / cm2, and field emission enhancement factor β is 676. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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