混摻PVP提升鈣鈦礦太陽能電池光電轉換效率之研究
| Autor: | Jia-Yu, Fan, 范珈毓 |
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| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 Controlling the morphology of perovskite absorbers is important for enhancing device efficiencies. This study explored the influences of device efficiencies due to different annealing temperatures, and time, and the addition of PVP into the perovskite film. Poly (vinyl pyrrolidone) (PVP) is applied to increase the surface coverage of perovskite. The addition of PVP in the perovskite films can result in smooth surfaces and well-distributed crystal domains. Sufficient surface coverage not only increases the light absorption of the cell, but also reduces the charge recombination at the interfaces. We used the UV-Vis, PL, SPM, TFE-SEM, XRD, and solar simulator to measure the absorbance, PL intensity, roughness, surface morphology crystallite size, and J-V characteristic, respectively. The structure of perovskite solar solar cell was ITO/ PEDOT：PSS/ Perovskite/ PC61BM/ Ag. The different annealing temperatures (100℃, 120℃, 140℃) and annealing time (10 min, 15 min) were used to investigate the effect on the photoelectric characteristics of the cells. The cell showed the highest power conversion efficiency (PCE) of 8.71% when annealed at 100℃ for 10 minutes. The PCE of the cell decreases with increasing temperature when the annealing time is 10 minutes. The higher annealing temperature resulted in the increase of grain size and roughness of film. The PCE of the cell decreases due to the increase of recombination of electron and holes. The cell annealed for 10 minutes always has higher PCE than that of the cell annealed for 15 minutes at three annealing temperature. The reason is that the stability of the perovskite crystal decrease with increasing annealing time and result in the decrease of PCE. We study the effect of the content of PVP (1%, 2%, 3%, 5%), annealing temperature (100℃, 120℃, 140℃) and annealing time (10 min, 15 min) on the photoelectric characteristics of perovskite cells. The cell structure was ITO/ PEDOT：PSS/ Perovskite：PVP/ PC61BM/Ag. (1) The cell has the highest PCE of 9.28% by addition of 3% PVP in perovskite when annealed at 100℃ for 10 minutes. The cells has the highest PCE of 9.99% by addition of 3% PVP in perovskite when annealed at 100℃ for 15 minutes. The cell annealed for 15 minutes has more complete cryatalline than that of annealed for 10 minutes. (2) The cell has the highest PCE of 9.19% by addition of 3% PVP in perovskite when annealed at 120℃ for 10 minutes. The cells has the highest PCE of 10.5% by addition of 3% PVP in perovskite when annealed at 120℃ for 15 minutes. The cell annealed for 15 minutes has more complete cryatalline than that of annealed for 10 minutes. (3) The cell has the highest PCE of 6.51% by addition of 3% PVP in perovskite when annealed at 140℃ for 10 minutes. The cells has the highest PCE of 6.09% by addition of 3% PVP in perovskite when annealed at 140℃ for 15 minutes. The crystal structure of the perovskite annealed for 15 minutes was destroyed owing to the overheating. From these results, adding PVP to the perovskite solar cells can improve the photoelectric characteristics. The cell with 3% PVP annealed at 120℃ for 15 minute exhibited photoelectric characteristics, it has the highest PCE of 10.5%, open circuit voltage of 0.96 V, short-circuit current density of 18.73 mA/cm2 and fill factor of 0.58. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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