Various Stacked Metal Precursor Layers for the Fabrication of CIGS Thin Films
| Autor: | Liu, De-Wei, 劉德緯 |
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| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 Copper indium gallium selenide (CIGS) is one of the most suitable materials for thin-film photovoltaic devices, due to highly efficient, low-cost thin film solar cells, and the commercial production of CIGS films is growing rapidly. The vary precursor layer structures In/CuGa/SLG, CuGa/In/SLG, In/CuGa/In/SLG, CuGa/In/CuGa/SLG were deposited by magnetron sputtering, using Cu0.75Ga0.25 (DC power=75 W) and In (DC power=30 W) targets. To vary the composition ratio of a CIGS absorber film, the In film was adjusted at various thick of 350, 550, 650, 700 and 750 nm, while the thickness of CuGa films were kept at 300 nm, and thermal evaporation of Se layers about 3000 nm. The experimental result shows that using In (750 nm)/CuGa (300 nm)/In (750 nm) precursor structures, both the Cu/(In+Ga) and Ga/(In+Ga) ratios are 0.92 and 0.23, respectively. The CIGS absorbers were successfully fabricated, are clearly dense and relatively smooth and no cracking or peeling. Raman analysis was not found Cu2Se second phase. Hall mobility increases form 3.45×102 cm2 /V-s to 8.5×103 cm2 /V-s and photo-conversion efficiency are improved. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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