Study of optical and electrical properties on Al-doped ZnO thin film grown on flexible substrate
| Autor: | Hong-Jian Guo, 郭弘健 |
|---|---|
| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 In this study, the Al-doped ZnO thin films were grown on flexible substrate by RF magnetron sputter, depend on the different percent thickness layers and thermal treatment on buffer layer, the optimum Al-doped ZnO thin film on flexible substrate had been grown. At first, the different thickness percent of buffer and cover layers had been deposited, and then different thermal temperatures were done on buffer layer to improve the interfacial bonding between buffer layer and substrate. After the optimum percent of buffer and cover layer structures were selected, the different density O2 plasma were selected to etch the surface of buffer layer, which will lead the uniform distribution of the Ag nano-particles on the surface to enhance the optoelectronic properties of AZO/ nano-Ag/ AZO layer on flexible substrate. In the study, the resistivity was measured by the Hall-effect measurement system and the optical property was measured by UV-Visible Spectrophotometer, the surface of buffer layer was analyzed by Atomic force microscopy (AFM) and scanning electron microscopy (SEM), the X-ray diffraction (XRD) was used to analysis the crystalline of thin film. As the results, the percent of AZO film at 50nm/30nm was selected, the 30 nm buffer layer was treated at 70℃ for 3 minutes and dry etched for 480 seconds, to lead the distribution of 50 seconds Ag nano particles and finally the 50nm AZO cover layer was deposited, the optimum AZO/nano-Ag/AZO thin films on flexible substrate had been grown. The low resistance is 5.26×10-5Ω-cm, the average transmittance in visible light is 87.43%, and the optimum figure of merit is 3.96×10-1Ω-1. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|