Quadratic High-Gain Boost Converter with Silicon Carbide Devices
| Autor: | Ming-Chieh Sun, 孫明傑 |
|---|---|
| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 Formerly silicon is the most important materials and has been adopted as Electronic component. Although the technology was promoted, and the cost also became cheaper, it still has the limit in its physical characteristics. Therefore, we need a solution to make it has better performance under the standard of power system that became more rigorous. However, The bandgap such as silicon carbide (SiC) has been proven that made many advantages in semiconductor research and development. Recently, the technology of bandgap was improved in its working temperature, working performance, power control and many new features devises. These are difficult to see and implement in silicon. As mentioned above, SiC is considered as the new power semiconductor devices and will become to be more widely used. In this thesis, we converted the silicon into SiC device to make it have high voltage and high gain with high step-up converter for photovoltaic power system. Also, we use the PSIM to simulate and verify the results for this experiment. Finally, we expect that have better performance in efficiency |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|