Fabrication and characterization of Au-Ag alloy thin film resistance random access memory
| Autor: | Chih-Chun Kuo, 郭芝君 |
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| Rok vydání: | 2015 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 103 In the modern life, the portable electric products are indispensable. Moreover the memory plays an important role on these products. Today, the manufacturing of portable electric products tends to be small, thin, compact, and energy-saving with technological advancements. Therefore, the next generation RRAM has been greatly focused and studied. The RRAM is known for the most potential next generation non-volatile memories, due to the advantages of simple structure, high density, low operational voltage, high read-write speed, and long storage time. In this thesis, the Au70Ag30 and Au30Ag70 alloy thin film and the SiO2 thin film are coated on the TiN electrode which was provided from Industrial Technology Research Institute (ITRI) via Lithography Electroforming Micro Molding technique. The results show that the Au-Ag alloy thin film owns comparably higher operational speed and is more energy-saving than the pure Ag thin film. The current conductive mechanisms and the metal filament models in the insulator layer of Au30Ag70/SiO2/TiN RRAM device are study and discussed. The other section is the fabrication of nanoporous Au-Ag alloy for the bottom electrode of RRAM devices. This section is talking about using the chemical dealloying method to control the surface morphology of the bottom electrode of RRAM devices. The results show that the surface morphology, roughness and composition can be controlled via immersing in HNO3 for different periods of time. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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