Electro-Thermal Simulation and Heat Dissipation Analysis of Packaged GaN Power-HEMT Devices
| Autor: | Wang, Chieh-An, 王婕安 |
|---|---|
| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 103 AlGaN/GaN high electron mobility transistors（HEMTs）are one of the prospective candidates for high switching frequency power electronics applications thanks to its wide band gap（3.4eV）, high breakdown voltage, large critical electric field, high carrier mobility, and the inherent high speed characteristics. With the high power densities that AlGaN/GaN HEMTs are capable of reaching, heat dissipation is a crucial issue. This research presents an in depth thermal study of packaged GaN on Si power devices. The device is attached in a V-groove copper base, to enhance Si substrate thermal dissipation. The effects of structure design and fabrication processes on the device performance were studied. To improve the reliability and the performance of GaN power-HEMT devices, thermal management is one of the most critical aspects. Micro-Raman spectroscopy and Infrared（IR）thermography were used to identify temperature profiles and the hot spots of the devices. For the purpose of more precise temperature measurements, temperature vs. Raman shift curve fitting of experimental data of our device is illustrated. The measurements of longitudinal temperature have been acquired, so that the position of the hottest layer（2DEG）is realized. Then, Raman area temperature map measured over the lateral hottest layer depicted in this study. The comparison between Raman/IR experiment results and finite-element electro and thermal simulation has been shown. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|