Solution Processed Strontium Zirconate Titanate as Gate Insulators for Pentacene-based Thin Film Transistors
| Autor: | Shih-YuanChen, 陳士元 |
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| Rok vydání: | 2015 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 103 The solution-processed high-κ strontium zirconate titanate (SZT) as gate dielectric for pentacene-based organic thin film transistor (OTFT) applications was demonstrated. In this study, multi-layered SZT process was utilized to not only suppress the leakage current, but also improve the surface smoothness and surface energy, which enhance the growth and arrangement of pentacene in first few layers. Then, Raman spectra was used to analyze the pentacene layer, showing that the intermolecular interaction was stronger for the pentacene grown on double-layered SZT dielectric. Finally, the fact that the double-layered SZT was beneficial for better quality of pentacene was confirmed by AFM and XRD analysis, and thus good performance of the transistors was exhibited, with high field-effect mobility of 11.27 cm2/V·s, low subthreshold swing of 224 mV/dec, and high on-off ratio of 1.28×104. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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