Sputtered ZrO2 thin film and its resistive switching properties
| Autor: | Hao-Hsiang Hsu, 許皓翔 |
|---|---|
| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 This paper investigates the resistive switching properties of Ag/ZrO2/ITO sandwiched device. Various preparing conditions of deposition time 60/180/300 min and mixed ratio of Ar to O2 atmosphere were adopted to find the optimal current- voltage characteristics, and to conduct further studies about the effect of measuring parameters, including the measured temperature, the current compliance ICC, and the voltage sweeping bias VSTOP. The I-V data at 25-100 C reveal that the on-state current ION rises with temperature, which implies the nature of non-metallic conduction. The positive polarity of the turn-on voltage VSET indicates the presence and disappearance of oxygen vacancies to be responsible for the formation and rupture of the filamentary path. The increasing ICC and VSTOP at set side both lead to the rise in currents ION and IOFF, but VSTOP at reset side lowers IOFF. The current and voltage at the switching threshold are believed to exert influence on the bi-stable states and the respective resistances, and that would require higher IRESET and VRESET to break the path of larger size. Capacitance change with bias is also examined to help interpret the resistance switching. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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