Research of Millimeter Wave Wideband Amplifier and Body Bias Control Oscillator
| Autor: | Po-Han Chiang, 姜博瀚 |
|---|---|
| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 This thesis is divided into two parts, one is a power amplifier and the other one is a voltage control oscillator (VCO). At the first, a 50 to 90 GHz power amplifier is realized in TSMC 65-nm CMOS process. The power amplifier utilizes the inter-stage matching network and the five-stage common source to cover full V-band and E-band frequency. In order to get high output power, the output port of the power amplifier combines four transistors. The PA exhibits a small signal gain from 53 to 84 GHz (3-dB bandwidth of 31 GHz), and 10.8 dBm Psat, and 7.2 dBm P1dB with a dc power of 123 mW with the drain voltage of 1.2 V. Secondly, a 220 GHz VCO is realized in TSMC 65 nm CMOS technology. The VCO utilizes the body bias to control the parasitic capacitor of the transistors, and the VCO achieves high output power and wide tuning range simultaneously. Under supply voltage 1.2 V, the tuning range of the VCO is 206 to 220 GHz; the output power is -1.6 dBm; the dc power is 43.2 mW; and the chip size is 0.062 mm2. Compared with the published works, this VCO exhibits the highest dc to RF conversion efficiency and power area density using CMOS technologies. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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