Influence of etching processes on surface properties of atomically clean graphene
| Autor: | David Ricardo Moyano Rivillas, 牟大衛 |
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| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 The current era of graphene became known to the wider world after the breakthrough discovery performed by A.K. Geim and K. Novoselov without using much more than adhesive tape. Ever since then graphene synthesis has become more sophisticated and reliable, all the way to the current chemical vapor deposition systems which can synthesize large-area, defect-free graphene. Despite all these advancements in graphene growth, an often overlooked part of the graphene synthesis process, corresponding to the etching solutions used to remove the metal catalyst present in CVD grown graphene. There is a general consensus that graphene leaves the etching and transfer process in a state of cleanness similar if not identical to the one achieved during growth; rather unfortunately this is not the case. During etching and transfer processes graphene not only collects unwanted foreign contaminants and dopants but the acids and polymers generally used leave imprints that are hard to ignore. In order to gain insight into these mechanisms, a combination of different etching solutions, together with scanning tunneling electron microscopy (STEM), electron-diffraction dispersion spectroscopy (EDS) and suspended micro-Raman are assembled to clarify how graphene etching can be improved and how a process that enters in direct contact with graphene surface, as it is etching and transfer leaves imprints that can be quantified and standardized in order to achieve a reliable graphene workflow. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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