Research on the Passivation of IV Group Semiconductor Substrates
| Autor: | Ding-yu Huang, 黃鼎育 |
|---|---|
| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 There are two main parts in this research. One is the analysis of the passivation layers on the silicon substrates or germanium substrates. Another one is the compare of the passivation effect on the different substrates (crystalline silicon and germanium). Four different materials were used to be the passivation layers of the group IV semiconductor substrates to reduce the recombination of the substrate surface. They are SiO2/SiNx, Ta2O5, TiO2 and Al2O3, the electrical and stoichiometric properties of the passivation layers are including their leakage current, excess minority carrier lifetime and atomc content ratio on the group IV semiconductor substrates. According to the experimental results, the SiO2/SiNx layers on the silicon substrate, achieved the best passivation effect. The minority lifetime is 127.97 μs, and the leakage current is 5.8×10-8 A (0.5 V). And the Ta2O5 layer on the germanium substrates also achieved the best passivation effect. The minority lifetime is 9.41μs and the leakage current is 9.77×10-5 A (0.5 V). |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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