Design and Analysis of Ultra-High Speed Photodiode and Flip-Chip Bonding Package for Reliable High-Power Operation from DC to 300GHz Operating Frequency
| Autor: | Cheng-Hung Lai, 賴政宏 |
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| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 Design and analysis of the flip-chip bonding package for near-ballistic uni-traveling-carrier photodiodes (NBUTC-PDs) with reliable high-power performance from dc to sub-THz (~300 GHz) frequency has been demonstrated. According to our simulation and measurement results, the geometric size of flip-chip bonding structure becomes a major limitation in speed and output power when the operating frequency is over ~100 GHz. In order to overcome this problem, the position of Au/Sn bump on bottom AlN substrate for bonding process, must be as close as possible with the active PD mesa on the InP substrate at topside. Compared with the control with a longer spacing (~90 vs. 25 m), our device not only exhibits a broader bandwidth (225 vs. 200 GHz) but also a higher saturation current (13 vs. 9 mA). With such an optimized flip-chip bonding structure for package of NBUTC-PD, a wide 3-dB bandwidth (~225 GHz), high saturation current (13 mA), and a 0.67 mW maximum output power at 260 GHz operating frequency have been achieved simultaneously. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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