Testing Methodology for Low-Power Dual-Port Utilizing Write-Assist Cells Against Simultaneous Access Disturbance
| Autor: | Huang, Chao-Ying, 黃召穎 |
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| Rok vydání: | 2013 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 With the increasing demand of parallel applications and multi-core operations, the advantages of Dual-Port SRAMs have become more important. Also, applications of SRAMs have moved from the traditional desktop to the mobile device; therefore, the designs which are aimed at low-power operations and high-speed accesses are currently prospering. Besides as process variation in the advanced technology becomes more severe, the stability of SRAMs in data retention mode and read/write operation has become more fragile. The low stability property may cause Dual-Port SRAMs unable to operate at low voltage. In order to maintain an acceptable read/write margin with low power issue, some read/write assist circuitries have been proposed recently. As a result, the thesis emphasizes on the fault behaviors of open defects for Dual-Port SRAMs with specific write-assist circuitry and its corresponding test methodologies for those hard-to-detect faults. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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