Studies of Oxygen-Plasma Approach for Depositing Silicon / Nitride Oxide on Transparent, Flexible Zinc-Oxide Thin Film Transistors
| Autor: | CHENG-JYUN, WANG, 王誠駿 |
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| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 This study describes a simple and efficient method for depositing of highly ordered and aligned Zinc Oxide (ZnO) film as the semiconducting channel layer for use in a transparent thin-film transistor (TFT) on a silicon and flexible polyimide (PI) substrate. The effect of an oxygen (O2) plasma power of 18 W followed by low temperature (~approximately 150 °C) annealing on a hot plate was evaluated, attempting to enhance on/off current ratio and sustainability of ZnO-TFTs. ZnO based TFTs fabricated on silicon oxide and nitride oxide exhibited on/off ratio of approximately 103 and 108, respectively without O2 plasma；these ratios can be improved to approximately 107 by using oxygen plasma treatment. The PI substrate exhibited an on/off ratio of approximately 108. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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