Using Zinc Oxide as Intermediate Layer for Glass Metallization
| Autor: | Chi-Wen Cheng, 鄭家雯 |
|---|---|
| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 For the chip packaging technology, the 2.5-dimensional / three-dimensional of the chip stacking technology is future-oriented packaging technology. The 2.5D/3D IC chip stacking technology is to connect chips in vertical integration, in this technology, interposers play important roles, which are important as bridges to the through-hole interconnection between chips. The 2.5D/3D IC chip technology not only shortens the transmission distance of the signal, but also have small volume, high Heterogeneous integration, high efficiency, low power consumption and cost advantages. However, glass wafer has a smooth and non-conductive surface, which is difficult to be metallized. To overcome this problem, sol-gel method was employed to make a zinc oxide layer as an intermediate for copper metallization of a glass wafer. The advantage of the process is that an etching step is not employed and the process cost is lower than those of sputtering or other dry processes. In this work copper nanoparticles (CuNPs) instead of palladium were employed as the catalyst for copper electroless plating because the cost of palladium is far higher than that of copper. In this process, zinc oxide plays an important role as an adhesion layer between the copper film and the glass. It was called an adhesive interlayer. In addition, a small amount of aluminum chloride was added in the sol-gel of zinc oxide precursor to produce an aluminum-doped zinc oxide. Aluminum-doped zinc oxide not only plays a role of adhesive interlayer, but also a conducting layer. As a result, copper can be directly electroplated on the aluminum-doped zinc oxide/glass. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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