Impact of Spraying Temperature and Film Thickness of Graphene Oxide Based Resistive RAM and the Characteristics with a Selector
| Autor: | Yen-Lun Huang, 黃彥綸 |
|---|---|
| Rok vydání: | 2014 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 102 This thesis studies the characteristic of graphene oxide (GO) resistive RAM (RRAM) with various film thicknesses and spraying-deposition temperatures of GO film, and the performance of GO RRAM with a selector. The first part is to study the effect of various thicknesses of GO film for the RRAM application. Two sets of GO film RRAMs are prepared. The first set has two kinds of thicknesses (1 layer (40 nm) and 3 layers (100 nm)) of GO films deposited at room temperature. The second set has three kinds of thicknesses (1 layer (18 nm), 3 layers (54 nm) and 15 layers (270 nm)) of GO films deposited at a temperature of 250ºC. According to the experimental results, the RRAM with 3 layers (54 nm) of GO film deposited at 250ºC shows the best performance and stability. The second part is to study the effect of spraying-deposition temperature of GO film in GO RRAM, there are two sets of samples fabricated to compare with. The first set has two spraying-temperatures of room and 250ºC with 3 layers of GO film. From the experimental results, the GO film thickness is decrease with the spraying temperature. Presumably, the H2O in GO solution will be remind or dry to make the thickness of GO film uncontroable depend on spraying temperature. Therefore, the second set GO RRAM fabricated at three spraying-temperatures of 100ºC, 200ºC and 250ºC, separately, with 15 layers of GO film (270 nm). The spraying-temperatures are large than 100ºC to avoid the solution evaporation issue. From the experimental results, the RRAM with GO film deposited at low temperature reveals lower SET and RESET currents and less degradation of GO RRAMs. Thus, the GO film fabricated at room temperatures on RRAM application shows the best performance. The third part is to study the effect of a selector connected with GO RRAM. In the primary study, Zener and Schottky diodes are used to simulate the behavior of GO RRAM with the selector (1S1R structure). Finally, a selector with Ni/TiOx/Ni structure is serial connected with the GO RRAM to study the electrical characteristic. From the experimental results, the Zener diode selector reveals less switching speed and higher SET/RESET voltage; and the Schottky diode selector reveals smaller SET/RESET voltage and larger SET/RESET current. The Ni/TiOx/Ni selector shows more stability and smaller operation current for the LRS of 1S1R device. Additionally, we found that the operating current of the selector is lower than the SET current of GO RRAM at 0.1 V, the SET process of the 1S1R device dominates by the selector. In the other hand, the operating current of the selector is higher than the SET current of GO RRAM at 0.1 V, the SET process at low voltage of the 1S1R device dominates by the GO RRAM. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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