Efficiency Improvement in Novel p-NiO/n-Si Heterojunction Solar Cells

Autor: Ming-Hao Chien, 簡明澔
Rok vydání: 2014
Druh dokumentu: 學位論文 ; thesis
Popis: 102
This study successfully fabricates p-Ni1-xO/n-Si heterojunction solar cell using the RF magnetron sputtering. The experiment is divided into three parts to investigate and the conversion efficiency of cell upgraded from 3.39% to 6.31%. First part is to investigate the influence of the RF sputtering power on the performance of p-Ni1-xO/n-Si solar cells, through the four point probe, UV-Vis, capacitance-voltage (C-V), light and dark current-voltage (I-V) measurements. The results show that the cell fabricated at sputtering power of 100 W has the highest conversion efficiency of 4.30% (Voc：0.390 V、Jsc：18.06 mA/cm2、FF：0.611、Rs：4.41 Ω、Rsh：671.76Ω). However, the conversion efficiency of 4.3% is still enough. Therefore, the second and third parts focus on the improvement of Jsc and FF. In the second part, we confirm that the surface texturation of window layer (Al-Y codoped ZnO) etched by diluted HCl effectively increases conversion efficiency of p-Ni1-xO:Li/n-Si heterojunction solar cells. The results show that the short circuit current density (Jsc) of cell etched at 10 s IV increases ~8.5% compared with unetchd cell, resulting in the increase of conversion efficiency to 4.63%. The third part is to improve the back surface Ohmic contact by inserting an ultra-thin LiF (n-Si/LiF/Al). We found the optimum specific contact resistance (ρc) was 4.75x10-3 Ωcm2 when the thickness of 15 Å of LiF inserted. Also, the insertion of LiF (15 Å) in p-Ni1-xO/n-Si solar cell could get the optimum conversion efficiency of 6.31% (Voc：0.441 V、Jsc：21.33 mA/cm2、FF：0.670、Rs：3.587 Ω、Rsh：1691.070 Ω). The improvement of conversion efficiency was due to the dipole-assisted tunneling effect and back surface passivation. Keywords : RF magnetron sputtering, NiO, heterojunction solar cell, LiF
Databáze: Networked Digital Library of Theses & Dissertations
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