Multi-Layer Atom Chips with Through Silicon Via for Ultra-high-vacuum Atom Glass Cell
| Autor: | Yun-Siang Lin, 林雲翔 |
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| Rok vydání: | 2013 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 101 In recent years, many research teams have begun to develop atom chips in BEC experiment. Atom chip is fabricated circuit on the wafer by MEMS that can provide magnetic with current and replace the large coils in traditional BEC experiment. In this study, we fabricated the multi-layer atom chip, which not only offers more flexibility on designing magnetic, also convenient in BEC experiment. In this thesis, negative photoresist SU-8 was chosen as the isolation layer between upper wire and bottom wire. From electric current test results, mote then 5 Amps of current can be successfully run through upper wire and bottom wire (wide 100μm). The other emphasis in this thesis, we integrated the multi-layer atom chip with through silicon via (TSV) technique, which will be anodic bonded to Pyrex glass cell and became chamber in BEC experiment. The realization of this technique can more reduce experimental space, and the high current can be applied to the metal wire on the atom chip through the TSV under ultra-high vacuum (HUV) environment. We fabricated feedthrough of 70μm by ICP-RIE and filled by the bottom-up copper electroplating. In packaging process, the atom chip and TSV need pass under the high temperature (250℃) and high electrical field (1000V) environment test. The atom chip cell can also pass a helium leaking detection and can be pumped to the ultra-high vacuum (9.5×10−10torr) after anodic bonding process. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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