Investigation on AlN-ZnO Cosputtered Films for ZnODouble Heterojunction Light-Emitting Diode Application

Autor: Chia-Cheng Ho, 何家丞
Rok vydání: 2013
Druh dokumentu: 學位論文 ; thesis
Popis: 101
AlN-ZnO cosputtered films were made of radio-frequency magnetron cosputtering system by using target AlN and ZnO. Film crystallinity and optoelectronic properties after annealing at 700℃ for 30min under vacuum ambient were improved. The use of un-doped zinc oxide thin films with different doping ratio AlN – ZnO sputtering film produce different heterostructures which are N-ZnO, AlN-ZnO(40%)/ZnO/AlN-ZnO(20%) and AlN-ZnO(40/%)/ZnO/AlN-ZnO (40%). Exploring the three structures of zinc oxide NBE intensity measured by the room temperature photoluminescence, we found the intensity of the AlN-ZnO 40/ZnO/AlN-ZnO 40% is the highest, and making double heterojunction LED junction body components in the commercial p-GaN substrate observes no significant diffusion in each element layer according to the Auger depth analysis, in I-V measurements,found that the high-temperature heat treatment will cause electrical characteristics crack of contacted electrodes, thus, proceeding vulcanization treatment with ammonium sulfide to p-GaN to remove native Ga-O bonding of p-GaN, cause Ga vacancy and enhance surface receptor concentration. Optimized p-GaN and contact features of the contacted electrode material, Ni / Au. By sputtering a thin layer of ZnO to n-type region can improve the contact characteristics of the AlN-ZnO 40% and 33% of the ITO-ZnO from 2.34E-03 Ω ㎝ 2 to 8.54E-04 Ω ㎝ 2. And the improvement of the double heterostructure （AlN-ZnO40%/ZnO/AlN-ZnO 40%）leads to the highest enhancement of zinc oxide band edge radiation.Trough structure optimization (AlN-ZnO (40%)/ZnO/AlN-ZnO (40%) and n-type electrode contact characteristics enhancement, short-band luminous intensity of AlN –ZnO/ZnO doubleheterojunction light emitting diodes would be effectively improved.
Databáze: Networked Digital Library of Theses & Dissertations
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